| PART |
Description |
Maker |
| TTB200T TTB200S TTB150T TTB150D |
SINGLE BIDIRECTIONAL BREAKOVER DIODE|285V V(BO) MAX|200MA I(S)|TO-220AC
SINGLE BIDIRECTIONAL BREAKOVER DIODE|285V V(BO) MAX|200MA I(S)|DO-214AB
SINGLE BIDIRECTIONAL BREAKOVER DIODE|235V V(BO) MAX|200MA I(S)|TO-220AC
SINGLE BIDIRECTIONAL BREAKOVER DIODE|235V V(BO) MAX|200MA I(S)|DO-15 单双向击穿二极管| 235V五（公报）最大| 200mA的我（县）|的DO - 15
|
ITT, Corp.
|
| M5M532R16J-10 M5M532R16J-12 M5M532R16J-15 M5M532R1 |
0.5 in Diameter, 200mA Single Deck Rotary Switch
From old datasheet system
524288-BIT CMOS STATIC RAM
524288-BIT (32768-WORD BY 16-BIT) CMOS STATIC RAM
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| LTC4263IDE-TR LTC3544BEUD LTC3544BEUD-PBF LTC4263I |
Quad Synchronous Step-Down Regulator: 2.25MHz, 300mA, 200mA, 200mA, 100mA
|
Linear Technology
|
| CIL148C CIL148A CIL148B CIL476 CIL768 CIL769 CIL61 |
TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 200MA I(C) | TO-106
TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 200MA I(C) | TO-105
TRANSISTOR | BJT | NPN | 12V V(BR)CEO | TO-106
TRANSISTOR | BJT | NPN | 15V V(BR)CEO | 200MA I(C) | TO-106
TRANSISTOR | BJT | NPN | 80V V(BR)CEO | TO-106
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 200MA I(C) | TO-106 晶体管|晶体管|叩| 60V的五（巴西）总裁| 200mA的一（c）|06
TRANSISTOR | BJT | NPN | 45V V(BR)CEO | 200MA I(C) | TO-106 晶体管|晶体管|叩| 45V的五（巴西）总裁| 200mA的一（c）|06
TRANSISTOR | BJT | NPN | 25V V(BR)CEO | TO-106
TRANSISTOR | BJT | NPN | 32V V(BR)CEO | 200MA I(C) | TO-106
TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 200MA I(C) | TO-106
TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 200MA I(C) | TO-106
|
Electronic Theatre Controls, Inc.
|
| SB02-03C |
Small signal(single type)
30V, 200mA Rectifier Shottky Barrier Diode
|
Sanyo Electric Co.,Ltd.
Sanyo Semiconductor
SANYO[Sanyo Semicon Device]
|
| DL-5345-C330-VXS DL-5340-C330-VX DL-5340-C330-VXS |
1 in Dia., 1 Amp Multi Deck Rotary Switch
1.125 Dia., 1/4 Amp Multi Deck Rotary Switch
Keypad, .750 in Centers
.5-.75 in Dia., 1/4 Amp Multi Deck Rotary Switch 1270纳米1610纳米半导体激光器模块2.5 Gbps的波分复用量子阱半导体激光器尾纤
1270 nm ~ 1610 nm DFB LD MODULES 2.5 Gbps CWDM MQW-DFB LD PIGTAIL 1270纳米1610纳米半导体激光器模块2.5 Gbps的波分复用量子阱半导体激光器尾纤
0.5 in Diameter, 200mA Single Deck Rotary Switch 1270纳米1610纳米半导体激光器模块2.5 Gbps的波分复用量子阱半导体激光器尾纤
|
Optoway Technology Inc.
Optoway Technology, Inc.
|
| 5610 5613R5KT2L.50XX 5611R10KT2L.50XX 5611R1KT2L.5 |
2 Diameter Single Turn Wirewound Precision Potentiometer
|
BI Technologies Corporation
BITECH[Bi technologies]
|
| 91ER5K 91ERXK |
Diameter Single Turn Cermet Trimming Potentiometer
|
BI Technologies
|
| 62MRXXLF |
1/4 Diameter Single Turn Cermet Trimming Potentiometer
|
Bi technologies
|
| 5713R5KL.50XX 5710 5711 5711R100KL.50XX 5711R10KL. |
3 Diameter Single Turn Wirewound Precision Potentiometer
|
BITECH[Bi technologies]
|
| P6LU-2415EH52 P6LU-0505EH52 P6LU-0512EH52 P6LU-120 |
Input voltage:12V, output voltage 12V (84mA), 5.2KV isolated 1W unregulated single output
Input voltage:24V, output voltage 5V (200mA), 5.2KV isolated 1W unregulated single output
Input voltage:12V, output voltage 5V (200mA), 5.2KV isolated 1W unregulated single output
5.2KV ISOLATED 1W UNREGULATED SINGLE OUTPUT SIP7 5.2KV隔震1W的未稳压单输出SIP7
|
PEAK[PEAK electronics GmbH]
|
